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汪萊 博士、副教授

通訊地址：北京市海淀區(qū)清華大學(xué)電子工程系 100084

辦公室位置：羅姆樓2-305

電話：+86-10-6279-8240

傳真：+86-10-6278-4900

電子郵箱：wanglai@tsinghua.edu.cn

教育背景2008年 清華大學(xué)電子工程系物理電子學(xué)專業(yè)博士學(xué)位
2003年 清華大學(xué)電子工程系電子科學(xué)與技術(shù)專業(yè)學(xué)士學(xué)位

工作履歷2012至今清華大學(xué)電子工程系 副教授
2010-2012 清華大學(xué)電子工程系 助理研究員
2008-2010年 清華大學(xué)電子工程系 博士后

學(xué)術(shù)兼職2014年第5屆白光LED和半導(dǎo)體照明國(guó)際會(huì)議出版委員會(huì)委員
2014年亞洲通信與光子會(huì)議技術(shù)委員會(huì)委員
2015年第16屆半導(dǎo)體缺陷識(shí)別、成像與物理國(guó)際會(huì)議程序委員會(huì)委員

研究領(lǐng)域面向國(guó)民經(jīng)濟(jì)和國(guó)家安全的發(fā)展需求，圍繞第三代半導(dǎo)體材料——GaN基材料，開展支撐半導(dǎo)體照明技術(shù)、新能源技術(shù)、量子技術(shù)、納米技術(shù)、紫外探測(cè)技術(shù)、傳感技術(shù)的關(guān)鍵新材料、新工藝和新器件研究。研究?jī)?nèi)容包括：
GaN基材料的MOCVD生長(zhǎng)技術(shù)；
GaN基發(fā)光二極管；
InGaN量子點(diǎn)及器件；
GaN基納米材料及納米結(jié)構(gòu)；
GaN基紫外光探測(cè)器和氣體、液體傳感器。

研究概況氮化物半導(dǎo)體材料被稱作第三代半導(dǎo)體，是一種寬禁帶半導(dǎo)體材料。在可見光、紫外光光電器件和大功率電子器件方面有重要應(yīng)用。本課題組從2000年起率先在國(guó)內(nèi)開展了氮化物L(fēng)ED的研究，在高內(nèi)量子效率InGaN量子阱外延生長(zhǎng)和機(jī)理研究方面取得了一系列成果。近年來，在國(guó)內(nèi)率先開展了InGaN量子點(diǎn)的生長(zhǎng)研究，研制出基于多層量子點(diǎn)有源區(qū)的藍(lán)、綠、黃、紅、近紅外、白光等多色LED，為下一代高色品半導(dǎo)體照明光源、低閾值可見光激光器的研制奠定了基礎(chǔ)。

本人目前承擔(dān)國(guó)家自然科學(xué)基金青年基金1項(xiàng)、國(guó)家“973”計(jì)劃課題2項(xiàng)、國(guó)家“863”計(jì)劃子課題3項(xiàng)、國(guó)家重點(diǎn)實(shí)驗(yàn)室開放基金1項(xiàng)。

獎(jiǎng)勵(lì)與榮譽(yù)2011年榮獲國(guó)家科技進(jìn)步二等獎(jiǎng)，排名第8。

學(xué)術(shù)成果迄今為止共發(fā)表SCI論文40余篇，累計(jì)他引160余次。主要代表性論文如下：
[1] Wang Lai, Yang Di, Hao Zhi-Biao, and Luo Yi. Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes, CHINESE PHYSICS B, 24(6): 067303, 2015.
[2] Yang Di, Wang Lai, Lv Wen-Bin, Hao Zhi-Biao, and Luo Yi. Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots, Superlattices and Microstructures, 82: 26-32, 2015.
[3] Wang Lai, Xing Yuchen, Hao Zhibiao, and Luo Yi. Study on carrier lifetimes in InGaN multi-quantum well with different barriers by time-resolved photoluminescence, Physica Status Solidi B, 252(5) SI: 956-960, 2015.
[4] Wang Bo, Wang Lai, Hao Zhibiao, and Luo Yi. Study on improving visible light photocatalytic activity of Ag3PO4 through morphology control, Catalysis Communications, 58:117-121, 2015.
[5] Chen, Yijing, Krishnamurthy Vivek, Lai Yicheng, Luo Yi, Hao Zhibiao, Wang Lai, and Ho Seng-Tiong. Fabrication of sub-200 nm AlN-GaN-AlN waveguide with cleaved end facet. Journal of Vacuum Science & Technology B, 32(4): 041207, 2014.
[6] Lai Wang, Wenbin Lv, Zhibiao Hao, and Yi Luo. Recent progresses on InGaN quantum dot light-emitting diodes. Front. Optoelectron., 7(3): 293, 2014. (invited review article)
[7] Niu Lang, Hao Zhibiao, E Yanxiong, Hu Jiannan, Wang Lai, and Luo Yi. MBE-grown AIN-on-Si with improved crystalline quality by using silicon-on-insulator substrates. Applied Physics Express, 7(6): 065505, 2014.
[8] Lv Wenbin, Wang Lai, Wang Lei, Xing Yuchen, Yang Di, Hao Zhibiao, and Luo Yi. InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength. Applied Physics Express, 7(2): 025203, 2014.
[9] Lv Wenbin, Wang Lai*, Wang Jiaxing, et. al., Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method, Japanese Journal of Applied Physics, 52, UNSP 08JG13, 2013
[10] Guo Zhibo, Wang Lai*, Hao Zhibiao, et. al., Modeling and experimental study on sensing response of an AlGaN/GaN HEMT-based hydrogen sensor, Sensors and Actuators B-chemical, 176, 241-247, 2013.
[11] Lv Wenbin, Wang Lai*, Wang Jiaxing, Hao Zhibiao, and Luo Yi, InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers, Nanoscale Research Letters, 7, 617, 2012.
[12] Zheng Ji-Yuan, Wang Lai, Hao Zhi-Biao, et. al., A GaN p-i-p-i-n Ultraviolet Avalanche Photodiode, Chinese Physics Letters, 29, 097804, 2012.
[13] Wang Jiaxing, Wang Lai*, Wang Lei, et. al., An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes,  Journal of Applied Physics, 112, 023107, 2012.
[14] Zhao Wei, Wang Lai*, Wang Jiaxing, Lv Wenbin, Hao Zhibiao, and Luo Yi, Growth and characterization of self-assembled low-indium composition InGaN nanodots by alternate admittance of precursors, Physica Status Solidi A, 209, 1096, 2012.
[15] Wang Lai*, Zhao Wei, Lv Wenbin, Wang Lei, Hao Zhibiao and Luo Yi, The influence of underlying layer on morphology of InGaN quantum dots self-assembled by metal organic vapor phase epitaxy, Physica Status Solidi C, 9, 782, 2012.
[16] Lv Wenbin, Wang Lai*, Wang Jiaxing, Hao Zhibiao, and Luo Yi, Density increase of upper quantum dots in dual InGaN quantum-dot layers, Chinese Physics Letters, 28, 128101, 2011.
[17] Wang Jia-Xing, Wang Lai, Hao Zhi-Biao, et. al., Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED, Chinese Physics Letters, 28, 118105, 2011.
[18] Li Shui-Qing, Wang Lai, Han Yan-Jun, et. al., A new growth method of roughed p-GaN in GaN-based light emitting diodes, Acta Physica Sinica, 60, 098107, 2011.
[19] Zhao Wei, Wang Lai*, Wang Jiaxing, Hao Zhibiao, and Luo Yi, Theoretical study on critical thicknesses of InGaN grown on (0001) GaN, Journal of Crystal Growth, 327, 202, 2011.
[20]  Zhao Wei, Wang Lai*, Wang Jiaxing, and Luo Yi, Luminescence properties of InxGa1-xN (x~0.04) films grown by metal organic vapour phase epitaxy, Chinese Physics B, 20, 076101, 2011.
[21] Zhao Wei, Wang Lai*, Wang Jiaxing, Hao Zhibiao, and Luo Yi, Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy, Journal of Applied Physics, 110, 014311, 2011.
[22] Zhao Wei, Wang Lai*, Lv Wenbin, Wang Lei, Wang Jiaxing, Hao Zhibiao, and Luo Yi, Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method, Japanese Journal of Applied Physics, 50, 065601, 2011.
[23] Wang Lai*, Zhao Wei, Hao Zhibiao, and Luo Yi, Photocatalysis of InGaN nanodots responsive to visible light, Chinese Physics Letters, 28, 057301, 2011.
[24] Wang, Jiaxing, Wang, Lai*, Zhao, Wei, et. al., Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization, Applied Physics Letters, 97, 201112, 2010.
[25] Wang Lai*, Wang Lei, Ren Fan, et. al., GaN grown on AIN/sapphire templates, Acta Physica Sinica, 59, 8021-8025, 2010.
[26] Wang Lai*, Wang Jia-Xing, Zhao Wei, et. al., Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells, Chinese Physics B, 19, 076803, 2010.
[27] Wang JiaXing, Wang Lai*, Zhao Wei, et. al., Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer, Science China-Technological Sciences, 53, 306-308, 2010.
[28]  Wang Lai*, Zhang Xian-Peng, Xi Guang-Yi, et. al., Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy, Acta Physica Sinica, 57, 5923-5927, 2008.
[29] Wang Lai*, Li Hongtao, Xi Guangyi, et. al., Effect of p-n junction location on characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes, Japanese Journal of Applied Physics, 47, 7101-7103, 2008
[30] Wang Lai*, Wang Jiaxing, Li Hongtao, Study on injection efficiency in InGaN/GaN multiple quantum wells blue light emitting diodes, Applied Physics Express, 1, 021101, 2008.