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北京理工大學(xué)物理學(xué)院研究生導(dǎo)師衡成林介紹如下：

姓名：衡成林

所在學(xué)科：物理學(xué)院

職稱：副教授

聯(lián)系電話：150---，86-10-68914027

E-mail：hengcl@bit.edu.cn

通信地址：北京市海淀區(qū)中關(guān)村南大街5號(hào) 北京理工大學(xué)物理學(xué)院

個(gè)人簡(jiǎn)歷

1990-1994年江蘇省蘇州大學(xué)物理系學(xué)習(xí)，獲得物理教育學(xué)士學(xué)位；

1994-1997年江蘇省蘇州大學(xué)物理科學(xué)與技術(shù)學(xué)院學(xué)習(xí)，獲凝聚態(tài)物理碩士學(xué)位。導(dǎo)師：姚偉國(guó)教授；

1997-2000年北京大學(xué)物理系學(xué)習(xí)，2000年6月獲得理學(xué)博士學(xué)位。導(dǎo)師：秦國(guó)剛院士

工作經(jīng)歷

2000年9月-2002年9月 新加坡-MIT聯(lián)盟（新加坡國(guó)立大學(xué)電子工程系）博士后，2001年轉(zhuǎn)為ResearchFellow；導(dǎo)師：A/P Weekiong Choi and A/P Waikim Choi

2003年3月-2005年7月 挪威奧斯陸大學(xué)物理系博士后；導(dǎo)師：Prof. Terje G. Finstad

2006年2月-2008年4月 加拿大McMaster大學(xué)工程物理系博士后；Prof. Peter Mascher

2008年12月-2017年8月 北京理工大學(xué)理學(xué)院（現(xiàn)物理學(xué)院），講師；

2017年9月-現(xiàn)在北京理工大學(xué)物理學(xué)院，副教授

科研方向

研究領(lǐng)域：硅基納米半導(dǎo)體的制備、表征和發(fā)光；稀土摻雜納米半導(dǎo)體材料發(fā)光；納米半導(dǎo)體材料電荷存儲(chǔ)性質(zhì)；利用正電子湮滅譜（PAS）探測(cè)摻雜氧化物結(jié)構(gòu)等。

主要研究方向和興趣：

1.稀土摻雜氧化鋅基底的結(jié)構(gòu)和發(fā)光性質(zhì)；

2.利用“稀土離子對(duì)”的下轉(zhuǎn)換發(fā)光調(diào)制太陽(yáng)光譜，提高硅基太陽(yáng)能電池的發(fā)光效率；

3.利用氧化石墨烯、ZnO納米晶等作為藥物載體，研究其在生物/醫(yī)學(xué)等方面的應(yīng)用；

4.硅基納米半導(dǎo)體（硅、鍺、砷化鎵等）的制備、發(fā)光和電荷存儲(chǔ)性質(zhì)。

學(xué)術(shù)成就

1.在國(guó)際上首次報(bào)道了含鍺（Ge）納米晶MIS結(jié)構(gòu)的電荷存儲(chǔ)性質(zhì)，成果發(fā)表在APL上，分別被引用133次和50次；

2.首次研究報(bào)道了Ge納米晶和稀土鉺離子共摻雜氧化硅薄膜的發(fā)光性質(zhì)，成果被APL審稿人評(píng)為“優(yōu)秀”，被引用36次；

3.提出富硅氧化硅中納米硅顆粒的形成機(jī)制，文章發(fā)表在JCG上被引用23次；采用電子束蒸發(fā)鍍膜+快速退火制備Ge納米晶，研究了Ge納米晶的形成機(jī)制和電荷存儲(chǔ)性質(zhì)，成果總共被引用42次；

4.深入研究了功能化氧化鋅納米晶在生物醫(yī)學(xué)方面的應(yīng)用，增強(qiáng)了其對(duì)腫瘤細(xì)胞的毒性。

研究基金有：國(guó)家自然基金（面上）、教育部留學(xué)回國(guó)啟動(dòng)基金、教育部博士點(diǎn)新教師基金、學(xué)校基礎(chǔ)科研基金等。

主要研究工作

1.C. L. Heng, W. Xiang, W. Y. Su, H. C. Wu, Y. K. Gao, P. G. Yin and T. G. Finstad, “Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing”, Opt. Mater. Express 7(8), 3041-3050(2017).

2.C. L. Heng, T. Wang, W. Y. Su, H. C. Wu, M. C. Yang, L. G. Deng, P. G. Yin and T. G. Finstad, “Intense ultraviolet photoluminescent emission from Yb doped ZnO thin films after high temperature annealing”, J. Alloy Compd. 695, 2232-2237 (2017).

3.C. L. Heng, T. Wang, W. Y. Su, H. C. Wu, P. G. Yin and T. G. Finstad, "Down-conversion luminescence from (Ce, Yb) co-doped oxygen-rich silicon oxides", J. Appl. Phys. 119, 123105 (2016).

4.C. L. Heng, T. Wang, H. Li, J. J. Liu, J. W. Zhu, A. Ablimit, W. Y. Su, H. C. Wu, P. G. Yin and T. G. Finstad, "Strong enhancement of ultra-violet emission by Ce doping of ZnO sputtered films", Material Letters 162, 53 (2016).

5.H.-C. Wu, M. Abid, Y.-C. Wu, C. Ó. Coileáin, A. Syrlybekov, J. F. Han, C. L. Heng, H. J. Liu, M. Abid, I. Shvets, "Enhanced Shubnikov-de Hass Oscillation in Nitrogen-Doped Graphene", ACS Nano 9, 7207 (2015).

6.A. Syrlybekov, H.-C. Wu, O. Mauit, Y.-C. Wu, P. Maguire, A. Khalid, C. Ó Coileáin, L. Farrell, C. L. Heng, M. Abid, H. J. Liu, H.-Z. Zhang, I. V. Shvets, "Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects", Nanoscale 7, 14055 (2015),

7.Z. Han, X. H. Wang, C. L. Heng*, Q. S. Han, S. F. Cai, J. Y. Li, C. Qi, W. Liang, R. Yang, and "C. Wang, "Synergistically enhanced photocatalytic and chemotherapeutic effects of aptamer-functionalized ZnO nanoparticles towards cancer cells", Phys. Chem. Chem. Phys. 2015, 17, 21576. (第一作者韓宙為本人碩士生，通訊作者）

8.C.L. Heng, J. T. Li, W. Y. Su, P. G. Yin and T. G. Finstad, "The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing, J. Appl. Phys.117, 043101 (2015).

9.C. L. Heng, J. T. Li, W. Y. Su, Z. Han, P. G. Yin, T. G. Finstad, "The formation of Yb silicates and its luminescence in Yb heavily doped silicon oxides after high temperature annealing", Optical Materials 42 (2015) 17-23.

10.C.L. Heng, W.Y. Su, Q. W. Zhang, X. Q. Ren, P. G. Yin, H. P. Pan, S. D. Yao and T. G. Finstad, “The photoluminescence from (Eu, Yb) co-doped silicon-rich oxides, J. Luminescence 154, 339 (2014).

11C. L. Heng, J.T.  Li, Z. Han and P. G. Yin, “An Abnormal Photoluminescence Enhancement in (Eu, Yb) Co-doped SiO2 Thin Film”, Integrated Ferroelectrics, Vol. 151, 179-186, 2014.

12.Zhang Xiao, Yang Rong, Wang Chen, Heng Chenglin*, “Cell Biocompatibility of Functionalized Graphene Oxide”, Acta Phys Chim Sin, 28 (06): 1520-1524 (2012). (第一作者張曉為本人碩士生，通訊作者）。

13.Jing Li，Othman Zalloum，Tyler Roschuk，Chenglin Heng, Jacek Wojcik, and Peter Mascher, “ The formation of light emitting cerium silicates in cerium-doped silicon oxides’, Appl. Phys. Lett. 94, 011112 (2009).

14.C. L. Heng, E. Chelomentsev, Z. L. Peng, P. Mascher, and P. J. Simpson, "Photoluminescence and positron annihilation spectroscopy investigation on (Er, Ge) co-doped Si oxides deposited by magnetron sputtering", J. Appl. Phys. 105, 014312(2009).

15.C.L. Heng, O. H. Y. Zalloum, E. Chelomentsev, J. Wojcik and P. Mascher, "The photoluminescence from Er-doped Si-rich Si oxides deposited by magnetron sputtering in an Ar or Ar+H2 plasma", J. Vacuum Science & Technology A，Vol. 27, 101-108, 2009.

16.C.L. Heng, O.H. Y. Zalloum, J. Wojcik T. Roschuk, and P. Mascher, "On the effects of double-step annealing processes to control light emission from Er-doped Si-rich Si oxide", J. Appl. Phys.103, 024309, 2008.

17.C. L. Heng, O. H. Y. Zalloum, E. Chelomentsev, and P. Mascher, "Photoluminescence from magnetron-sputtered SiO2 films co-doped with (Er, Ge) under excitation of a 325 nm He-Cd laser line", Electrochemistry Society Trans. Vol. 6, (3) 549-559, 2007.

18.J. Mayandi, T.G. Finstad,C.L. Heng, S. Foss, H. Klette, ”Infrared electroluminescence from a Si MOS structure with Ge in the oxide", J. LUMINESCENCE, 127, 362-366, 2007.

19.C.L. Heng, O.H. Y. Zalloum, T. Roschuk, D. Blakie, J. Wojcik and P. Mascher, "Photoluminescence studies for an Er-doped Si-rich SiOx film: effects of annealing gas ambients and double-step processes", Electrochemistry and Solid-State Letters, Vol. 10, K20-K23, 2007.

20.C.L. Heng, Y.J. Li, J. Mayandi, T.G. Finstad, S. Jørgensen,A.E. Gunnæs,P. Storås,A. Olsen, ”A study on the precipitation of Ge-rich nano-particles in a luminescent (Er, Ge) co-doped SiO2 film sputtered with Ar+O2 plasma”, International journal of Nanoscience, vol. 5 (4-5) 493, 2006.

21.C.L. Heng, T.G. Finstad, P. Storås, A.E. Gunnæs, and Y.J. Li, ”Ge nanoparticle formation and photoluminescence in Er doped SiO2 films: influence of sputter gas and annealing”, Microelectronics Journal, vol. 36 (3-6)531-535, 2005.

22.C.L. Heng, T.G. Finstad, P. Storås, A.E. Gunnæs, Y.J. Li and O. Nilsen, “Photoluminescence properties from Er-doped germanium rich SiO2 film”, APPL PHYS LETT85 (19): 4475-4477 NOV 8, 2004.

23.C.L. Heng, and T.G. Finstad, “Electrical characteristics of a mental-insulator-semiconductor memory structure containing germanium nanocrystals”, PHYSICA E, Vol. 26 (1-4):386-390, 2005.

24.C.L. Heng, Y.J. Liu, A.T.S. Wee, and T.G. Finstad, “The formation of Ge nanocrystals in a metal-insulator-semiconductor structure and its memory effect”, J Crystal Growth, 262 (1-4): 95-104, 2004.

25.C.L. Heng, W.W. Tjiu, and T.G. Finstad, “Charge storage effects in a metal-insulator-semiconductor structure containing germanium nanocrystals fabricated by rapid thermal annealing of an electron-beam evaporated germanium layer”, Applied Physics A: Materials Science & Processing, rapid communication, Vol. 78, 1181-1186, 2004.

26.C. L. Heng, L. W. Teo, Vincent Ho, M. S. Tay, Y. Lei, W. K. Choi and W. K. Chim, “Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure”,Microelectronic engineering, Volume 66, Issues 1-4, Pages 218-223, April 2003.

27.L.W. Teo, W.K. Choi, W.K. Chim, V. Ho, M.S. Tay, C.L. Heng, Y. Lei, D.A. Antoniadis, and E.A. Fitzgerald, “Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure”, APPL PHYS LETT 81 (19): 3639-3641 NOV 4 2002.

28.Choi WK, Chim WK, Heng CL, et al. ”Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure”, APPL PHYS LETT 80 (11): 2014-2016 MAR 18 2002.

29.Heng CL, Chen Y, Ma ZC, Qin GG,“Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure”, J APPL PHYS 89 (10): 5682-5686 MAY 15 2001.

30.Heng CL, Sun YK, Qin GG. ”Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias”, APPL PHYS LETT 77 (10): 1416-1418 SEP 4 2000.

31.Sun YK, Heng CL, Qin GG,"Electroluminescence from Au/(SiO2/Si/SiO2) nanoscale double-barrier/n(+)-Si structure”, ACTA PHYS SIN-CH ED 49 (7): 1404-1408 JUL 2000.

32.You LP, Heng CL, Ma SY, QinGG. ”Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films”, J CRYST GROWTH 212 (1-2): 109-114 APR 2000.

33.Qin GG, Heng CL, Bai GF, et al. ”Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si”, APPL PHYS LETT 75 (23): 3629-3631 DEC 6 1999.

34.Heng CL, Zhang BR, Qiao YP, Qin GG. "Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices”, PHYSICA B 270 (1-2): 104-109 OCT 1999.

35.姚偉國(guó)，陳貴賓，衡成林，吳雪梅，“GaAs顆粒鑲嵌薄膜的制備及光吸收特性的研究”，功能材料與器件學(xué)報(bào)，Vol.3, 1997.